Amaseli elanga ahlukaniswe abe yi-crystalline silicon kanye ne-amorphous silicon, phakathi kwawo amangqamuzana e-silicon e-crystalline angaphinde ahlukaniswe abe amaseli e-monocrystalline namaseli e-polycrystalline;ukusebenza kahle kwe-silicon ye-monocrystalline kuhlukile ku-crystalline silicon.
Ukuhlukaniswa:
Amaseli e-silicon e-solar crystalline asetshenziswa kakhulu e-China angahlukaniswa abe:
Ikristalu eyodwa 125*125
Ikristalu eyodwa 156*156
I-Polycrystalline 156*156
Ikristalu eyodwa 150*150
Ikristalu eyodwa 103*103
I-Polycrystalline 125*125
Inqubo yokukhiqiza:
Inqubo yokukhiqiza yamaseli elanga ihlukaniswe yaba ukuhlolwa kwe-silicon wafer - ukuthungwa kwe-surface texturing kanye ne-pickling - i-diffusion junction - ingilazi ye-silicon ye-dephosphorization - i-plasma etching kanye ne-pickling - i-anti-reflection coating - ukuphrinta kwesikrini - Ukucwiliswa okusheshayo, njll. Imininingwane imi kanje:
1. Ukuhlolwa kwe-Silicon wafer
Ama-Silicon wafers angabathwali bamaseli elanga, futhi ikhwalithi yama-silicon wafers inquma ngokuqondile ukusebenza kahle kokuguqulwa kwamaseli elanga.Ngakho-ke, kuyadingeka ukuhlola ama-wafers e-silicon angenayo.Le nqubo isetshenziselwa ukulinganisa okuku-inthanethi kweminye imingcele yobuchwepheshe yamawafa e-silicon, le mingcele ikakhulukazi ihlanganisa ukungalingani kwe-wafer surface, impilo yenkampani yenkampani encane, ukuphikiswa, uhlobo lwe-P/N nama-microcracks, njll. Leli qembu lezinto zokusebenza lihlukaniswe ngokulayisha nokulayishwa okuzenzakalelayo. , ukudluliswa kwe-silicon wafer, ingxenye yokuhlanganisa uhlelo kanye namamojula amane okuthola.Phakathi kwazo, i-photovoltaic silicon wafer detector ibona ukungalingani kwendawo ecwecwana ye-silicon, futhi ngesikhathi esifanayo ithola amapharamitha wokubukeka njengosayizi kanye ne-diagonal yesicwecwana se-silicon;imojula yokutholwa kwe-micro-crack isetshenziselwa ukuthola imifantu emincane yangaphakathi ye-silicon wafer;ngaphezu kwalokho, kunamamojula amabili Wokutholwa, enye yamamojula okuhlola aku-inthanethi isetshenziswa kakhulu ukuhlola ukuphikiswa kwenqwaba yama-wafers e-silicon kanye nohlobo lwama-wafers e-silicon, kanti enye imojula isetshenziselwa ukuthola isikhathi sokuphila esithwala i-silicon yama-wafers.Ngaphambi kokutholwa kwempilo yenkampani yenethiwekhi encane kanye nokumelana, kuyadingeka ukuthola ukuqhekeka kwe-diagonal kanye nama-micro-wafer we-silicon, bese ususa ngokuzenzakalelayo i-silicon wafer eyonakele.Imishini yokuhlola i-Silicon wafer ingalayisha futhi yehlise ngokuzenzakalelayo ama-wafers, futhi ingabeka imikhiqizo engafanelekile endaweni engashintshi, ngaleyo ndlela ithuthukise ukunemba nokusebenza kahle kokuhlolwa.
2. Ubuso buthungwe
Ukulungiswa kokuthungwa kwe-silicon ye-monocrystalline ukusebenzisa i-anisotropic etching ye-silicon ukwakha izigidi zamaphiramidi e-tetrahedral, okungukuthi, izakhiwo zamaphiramidi, phezu kwawo wonke amasentimitha ayisikwele e-silicon.Ngenxa yokucwebezela okuningi nokuhlehla kokukhanya kwesigameko endaweni, ukumuncwa kokukhanya kuyenyuka, futhi ukusebenza kahle kwebhethri kwesiyingi esifushane nokusebenza kokuguqulwa kuyathuthukiswa.Isixazululo se-anisotropic etching se-silicon ngokuvamile siyisisombululo se-alkaline esishisayo.Ama-alkali atholakalayo yi-sodium hydroxide, i-potassium hydroxide, i-lithium hydroxide ne-ethylenediamine.Iningi le-silicon ye-suede lilungiswa ngokusebenzisa isixazululo esingabizi se-dilute ye-sodium hydroxide ene-concentration ye-1%, futhi izinga lokushisa lokugubha liyi-70-85 ° C.Ukuze uthole i-suede efanayo, i-alcohol efana ne-ethanol ne-isopropanol kufanele futhi yengezwe kwisisombululo njengama-complexing agents ukusheshisa ukugqwala kwe-silicon.Ngaphambi kokuba i-suede ilungiswe, i-wafer ye-silicon kufanele ifakwe ngaphansi kwe-preliminary surface etching, futhi cishe i-20-25 μm iqoshwe ngesisombululo se-alkaline noma esine-acidic etching.Ngemuva kokuthi i-suede iqoshwe, ukuhlanzwa kwamakhemikhali jikelele kwenziwa.Amawafa e-silicon alungiselelwe phezulu akufanele agcinwe emanzini isikhathi eside ukuvimbela ukungcola, futhi kufanele asakazwe ngokushesha ngangokunokwenzeka.
3. Ifindo lokusabalalisa
Amaseli elanga adinga indawo enkulu ye-PN junction ukuze abone ukuguqulwa kwamandla okukhanya kumandla kagesi, futhi isithando somlilo siwumshini okhethekile wokukhiqiza ukuhlangana kwe-PN kwamaseli elanga.Isithando somlilo se-tubular diffusion ikakhulukazi sakhiwe izingxenye ezine: izingxenye ezingaphezulu nezingezansi zesikebhe se-quartz, igumbi legesi ephumayo, ingxenye yomzimba wesithando somlilo kanye nengxenye yekhabhinethi yegesi.I-Diffusion ngokuvamile isebenzisa umthombo we-phosphorus oxychloride liquid njengomthombo wokusabalalisa.Faka i-silicon wafer yohlobo lwe-P esitsheni se-quartz se-tubular diffusion furnace, bese usebenzisa i-nitrogen ukuletha i-phosphorus oxychloride esitsheni se-quartz ekushiseni okuphezulu okungu-850-900 degrees Celsius.I-phosphorus oxychloride ihlangana ne-silicon wafer ukuthola i-phosphorus.i-athomu.Ngemva kwesikhathi esithile, ama-athomu e-phosphorus angena ongqimbeni olungaphezulu lwesicwecwana se-silicon esuka nxazonke, futhi angene futhi asakaze esicwecweni se-silicon ngokusebenzisa izikhala phakathi kwama-athomu e-silicon, enze ukuxhumana phakathi kwe-semiconductor yohlobo lwe-N kanye ne-P- thayipha i-semiconductor, okungukuthi, i-PN junction.I-PN junction ekhiqizwe yile ndlela inokufana okuhle, ukungafani kokumelana neshidi kungaphansi kuka-10%, futhi isikhathi sempilo yenkampani yenkampani encane singaba ngaphezu kuka-10ms.Ukwakhiwa kwe-PN junction kuyinqubo eyisisekelo futhi ebucayi kakhulu ekukhiqizeni amaseli elanga.Ngenxa yokuthi ukwakhiwa kwe-PN junction, ama-electron kanye nezimbobo azibuyeli ezindaweni zazo zangempela ngemva kokugeleza, ukuze kusungulwe i-current, futhi i-current ikhishwe ngocingo, okuyinto yamanje eqondile.
4. Dephosphorylation silicate glass
Le nqubo isetshenziswa ekukhiqizeni amaseli elanga.Ngokufakwa kwamakhemikhali, isicwecwana se-silicon sicwiliswa kusisombululo se-hydrofluoric acid ukuze sikhiqize ukusabela kwamakhemikhali ukuze kukhiqizwe inkimbinkimbi encibilikayo i-hexafluorosilicic acid ukususa uhlelo lokusabalalisa.Ungqimba lwengilazi ye-phosphosilicate olwakhiwe ebusweni be-silicon wafer ngemva kokuhlangana.Ngesikhathi senqubo yokusabalalisa, i-POCL3 ihlangana ne-O2 ukuze yakhe i-P2O5 efakwa ebusweni be-silicon wafer.I-P2O5 isabela ne-Si ukuze ikhiqize i-SiO2 nama-athomu e-phosphorus, Ngale ndlela, ungqimba lwe-SiO2 oluqukethe izakhi ze-phosphorus kwakheka ebusweni be-wafer ye-silicon, ebizwa ngokuthi ingilazi ye-phosphosilicate.Imishini yokukhipha ingilazi ye-phosphorous silicate ngokuvamile yakhiwa umzimba omkhulu, ithangi lokuhlanza, i-servo drive system, ingalo yomshini, uhlelo lokulawula ugesi kanye nohlelo lokusatshalaliswa kwe-asidi oluzenzakalelayo.Imithombo yamandla eyinhloko i-hydrofluoric acid, i-nitrogen, umoya ocindezelwe, amanzi ahlanzekile, umoya okhipha ukushisa kanye namanzi angcolile.I-Hydrofluoric acid incibilikisa i-silica ngoba i-hydrofluoric acid ihlangana ne-silica ukuze ikhiqize igesi ye-silicon tetrafluoride eguqukayo.Uma i-hydrofluoric acid idlulele, i-silicon tetrafluoride ekhiqizwa ukusabela izophinde iphendule nge-hydrofluoric acid yakhe inkimbinkimbi encibilikayo, i-hexafluorosilicic acid.
5. Ukufakwa kwe-Plasma
Njengoba phakathi nenqubo yokusabalalisa, ngisho noma ukuhlukaniswa kwe-back-to-back kwamukelwa, i-phosphorus izosatshalaliswa nakanjani kuzo zonke izindawo ezihlanganisa imiphetho yesinkwa se-silicon.Ama-electron akhiqizwe isithombe aqoqwe ohlangothini olungaphambili lwe-PN junction azogeleza eduze kwendawo yonqenqema lapho i-phosphorus isakazwa khona ohlangothini olungemuva lwe-PN junction, okubangela ukujikeleza okufushane.Ngakho-ke, i-silicon ene-doped ezungeze iseli yelanga kufanele iqoshwe ukuze isuse ukuhlangana kwe-PN onqenqemeni lweseli.Le nqubo ngokuvamile yenziwa kusetshenziswa amasu e-plasma etching.I-Plasma etching isesimweni sokucindezela okuphansi, ama-molecule angumzali wegesi esebenzayo i-CF4 ajatshuliswa amandla efrikhwensi yomsakazo ukuze akhiqize i-ionization futhi akhe i-plasma.I-Plasma yakhiwe ngama-electron nama-ion ashajiwe.Ngaphansi komthelela wama-electron, igesi egunjini lokusabela ingakwazi ukumunca amandla futhi yakhe inqwaba yamaqembu asebenzayo ngaphezu kokuguqulwa ibe ama-ion.Amaqembu asebenzayo asebenzayo afinyelela ebusweni be-SiO2 ngenxa yokusatshalaliswa noma ngaphansi kwesenzo senkundla kagesi, lapho asabela ngamakhemikhali nobuso bento okufanele iqoshwe, futhi akhe imikhiqizo yokusabela eguquguqukayo ehlukana nobuso bento ezoqoshwa. zigxiliwe, futhi zikhishwa ngaphandle komgodi ngesistimu ye-vacuum.
6. I-anti-reflection enamathela
Ukubonakala kwendawo ye-silicon epholishiwe yi-35%.Ukuze unciphise ukubonakala kwendawo futhi uthuthukise ukusebenza kahle kokuguqulwa kweseli, kuyadingeka ukufaka ungqimba lwefilimu ye-silicon nitride anti-reflection.Emkhiqizweni wezimboni, imishini ye-PECVD ivame ukusetshenziselwa ukulungisa amafilimu aphikisayo.I-PECVD iwukuba ku-plasma kuthuthukiswe umhwamuko wamakhemikhali.Umgomo wayo wezobuchwepheshe ukusebenzisa i-plasma enezinga lokushisa eliphansi njengomthombo wamandla, isampula ibekwe ku-cathode yokukhishwa okukhanyayo ngaphansi kwengcindezi ephansi, ukukhishwa okukhanyayo kusetshenziselwa ukushisa isampula ekushiseni okunqunywe kusengaphambili, bese kuba nenani elifanele amagesi asebenzayo i-SiH4 kanye ne-NH3 yethulwa.Ngemva kochungechunge lokusabela kwamakhemikhali nokusabela kwe-plasma, ifilimu yesimo esiqinile, okungukuthi, ifilimu ye-silicon nitride, yakheka ebusweni besampula.Ngokuvamile, ukushuba kwefilimu efakwe yile ndlela yokubeka umhwamuko wamakhemikhali e-plasma cishe kungama-70 nm.Amafilimu alolu hlobo lokuqina anokusebenza kokubona.Ngokusebenzisa isimiso sokuphazanyiswa kwefilimu emincane, ukubonakaliswa kokukhanya kungancishiswa kakhulu, isikhashana esifushane kanye nokukhishwa kwebhethri kwanda kakhulu, nokusebenza kahle nakho kuthuthukiswa kakhulu.
7. ukuphrinta kwesikrini
Ngemuva kokuthi i-solar cell idlule ezinqubweni zombhalo, ukusabalalisa kanye ne-PECVD, kwakhiwa i-PN junction, engakwazi ukukhiqiza okwamanje ngaphansi kokukhanya.Ukuze ukhiphe i-current ekhiqizwayo, kuyadingeka ukwenza ama-electrode amahle futhi angalungile ebusweni bebhethri.Kunezindlela eziningi zokwenza ama-electrode, futhi ukuphrinta kwesikrini kuyinqubo evamile yokukhiqiza yokwenza ama-electrode amaseli elanga.Ukuphrinta isikrini ukuphrinta iphethini enqunywe kusengaphambili ku-substrate ngokusebenzisa ukugqamisa.Isisetshenziswa siqukethe izingxenye ezintathu: ukuphrinta kwe-silver-aluminium paste ngemuva kwebhethri, ukuphrinta kwe-aluminiyamu yokunamathisela ngemuva kwebhethri, nokuphrinta kwe-silver-paste ngaphambili kwebhethri.Umgomo wayo wokusebenza uthi: sebenzisa i-mesh yephethini yesikrini ukuze ungene endaweni ethambile, usebenzise ingcindezi ethile engxenyeni yesikrini enodaka nge-scraper, bese uya ngakolunye uhlangothi lwesikrini ngesikhathi esifanayo.Uyinki uminyanisa kusukela kumeshi yengxenye yesithombe ku-substrate yi-squeegee njengoba ihamba.Ngenxa yomphumela we-viscous we-paste, i-imprint igxilile ngaphakathi kwebanga elithile, futhi i-squeegee ihlale ixhumene nomugqa wokuphrinta isikrini kanye ne-substrate ngesikhathi sokuphrinta, futhi umugqa wokuxhumana uhamba nokuhamba kwe-squeegee ukuqedela. umshini wokunyathelisa.
8. sintering ngokushesha
Iwafa ye-silicon ephrinte isikrini ayikwazi ukusetshenziswa ngokuqondile.Idinga ukushiswa ngokushesha esithandweni esishisayo ukuze kushiswe i-organic resin binder, kushiye ama-electrode esiliva acishe acwenge anamathele ku-wafer ye-silicon ngenxa yesenzo sengilazi.Lapho izinga lokushisa le-electrode esiliva kanye ne-silicon ye-crystalline kufinyelela ekushiseni kwe-eutectic, ama-athomu e-silicon e-crystalline ahlanganiswe ezintweni ezincibilikisiwe ze-electrode esiliva ngesilinganiso esithile, ngaleyo ndlela enze ukuthintana kwe-ohmic kwama-electrode angaphezulu naphansi, futhi athuthukise isifunda esivulekile. I-voltage kanye nesici sokugcwalisa seseli.Ipharamitha eyinhloko ukuyenza ibe nezici zokumelana ukuze ithuthukise ukusebenza kahle kokuguqulwa kweseli.
Isithando somlilo sihlukaniswe izigaba ezintathu: pre-sintering, sintering, kanye nokupholisa.Inhloso yesiteji sangaphambi kwe-sintering ukubola nokushisa i-polymer binder ku-slurry, futhi izinga lokushisa likhuphuka kancane kulesi sigaba;esigabeni se-sintering, ukusabela okuhlukahlukene ngokomzimba namakhemikhali kuqedwa emzimbeni we-sintered ukwakha isakhiwo sefilimu esiphikisayo, okwenza kube nokumelana ngempela., izinga lokushisa lifinyelela inani eliphakeme kakhulu kulesi sigaba;esiteji sokupholisa nokupholisa, ingilazi ipholile, iqiniswe futhi iqiniswe, ukuze isakhiwo sefilimu esiphikisayo sinamathele ngokuqinile ku-substrate.
9. Amapheripheri
Enqubweni yokukhiqizwa kwamaseli, izinsiza ezizungezile ezifana nokuphakelwa kukagesi, amandla, ukuhlinzekwa kwamanzi, i-drainage, i-HVAC, i-vacuum, nesitimu esikhethekile nazo ziyadingeka.Izisetshenziswa zokuvikela umlilo nezokuvikela imvelo nazo zibaluleke kakhulu ukuze kuqinisekiswe ukuphepha nentuthuko eqhubekayo.Ngolayini wokukhiqiza amaseli elanga anomphumela wonyaka we-50MW, ukusetshenziswa kwamandla kwenqubo kanye nemishini yamandla iyodwa cishe ku-1800KW.Inani lenqubo yamanzi ahlanzekile lingaba amathani angu-15 ngehora, futhi izidingo zekhwalithi yamanzi zihlangabezana nezinga lobuchwepheshe le-EW-1 lamanzi e-electronic grade yase-China GB/T11446.1-1997.Inani lamanzi okupholisa inqubo nalo lingaba amathani ayi-15 ngehora, usayizi wezinhlayiyana eqophelweni lamanzi akufanele libe ngaphezu kwama-microns ayi-10, futhi izinga lokushisa kwamanzi kufanele libe ngu-15-20 °C.Ivolumu yokukhipha ivacuum icishe ibe ngu-300M3/H.Ngesikhathi esifanayo, cishe ama-cubic metres angama-20 amathangi okugcina initrogen kanye nama-cubic metres ayi-10 wamathangi okugcina umoya-mpilo nawo ayadingeka.Ngokucabangela izici zokuphepha zamagesi akhethekile afana ne-silane, kuyadingeka futhi ukusetha igumbi elikhethekile legesi ukuze uqinisekise ngokuphelele ukuphepha kokukhiqiza.Ngaphezu kwalokho, imibhoshongo evuthayo ye-silane kanye neziteshi zokuhlanza indle nazo ziyizinsiza ezidingekayo zokukhiqiza amaseli.
Isikhathi sokuthumela: May-30-2022
